Ch-technology CM75TU-24F Manual de usuario descargar pdf (Pagina 4)

CM75TU-24F

Trench Gate Design Six IGBTMOD™

75Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Dynamic Electrical Characteristics, T

= 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

ies

––29 nf

Output Capacitance C

oes

= 10V, V

= 0V ––1.3 nf

Reverse Transfer Capacitance C

res

––0.75 nf

Inductive Turn-on Delay Time t

d(on)

= 600V, I

= 75A, ––100 ns

Load Rise Time t

GE1

= V

GE2

= 15V, ––50 ns

Switch Turn-off Delay Time t

d(off)

= 4.2⍀, ––400 ns

Times Fall Time t

Inductive Load ––300 ns

Diode Reverse Recovery Time** t

Switching Operation ––150 ns

Diode Reverse Recovery Charge** Q

= 75A – 3.1 – µC

Thermal and Mechanical Characteristics, T

= 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

th(j-c)

Q Per IGBT 1/6 Module, T

Reference – 0.28 °C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case R

th(j-c)

D Per FWDi 1/6 Module, T

Reference ––0.47 °C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case R

th(j-c)

'Q Per IGBT 1/6 Module, – 0.19 °C/W

Reference Point Under Chip

Contact Thermal Resistance R

th(c-f)

Per Module, Thermal Grease Applied – 0.015 – °C/W

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

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Ch-technology CM75TU-24F Manual de usuario Pagina 4

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