Ch-technology SD803C..C Series Manual de usuario descargar pdf (Pagina 6)

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Document Number: 93180

6 Revision: 04-Aug-08

SD803C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 845 A

Fig. 13 - Recovery Current Characteristics

Fig. 14 - Recovery Time Characteristics

Fig. 15 - Recovery Charge Characteristics

Fig. 16 - Recovery Current Characteristics

Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics

100

110

120

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Rec overy Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

I = 1000 A

Sq u a r e Pu l se

500 A

250 A

SD 8 0 3 C . . S1 0 C Se r i e s

T = 125 °C; V = 30V

2.5

3.5

00101

Ra t e O f Fa ll O f Fo rw a rd C u rr e n t - d i / d t (A/ µ s)

Maximum Reverse Rec ove ry Time - Trr (µs)

I = 1000 A

Sq u a r e P u l se

500 A

250 A

SD 8 0 3 C . . S1 5 C Series

T = 125 °C; V = 30V

100

120

140

160

180

200

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of Forward Current - di/dt (A/µs)

I = 1000 A

Sq u a r e P u l se

500 A

250 A

SD 8 0 3 C . . S1 5 C Se r i e s

T = 125 °C; V = 30V

100

110

120

130

140

10 20 30 40 50 60 70 80 90 100

Maximum Re verse Recove ry Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

I = 1000 A

Sq u a r e Pu l se

500 A

250 A

SD 8 0 3 C . . S1 5 C Series

T = 125 °C; V = 30V

1E1

1E2

1E3

1E4

1E1 1E2 1E3 1E4

0.1

Pu lse Ba se w id t h ( µ s)

Peak Forward Current (A)

d v/ d t = 1000V/ µs

Si n u so i d a l Pu l se

20 joules per p ulse

0.4

0.2

0.04

T = 125°C, V = 800V

RRM

0.02

0.01

SD803C..S10C Se rie s

1E11E21E31E4

0.1

Pu lse Ba se w i d t h ( µ s)

20 joules pe r p ulse

0.4

0.2

0.04

T = 125°C, V = 800V

Tr a p e z o i d a l P u l se

dv/dt = 1000V/µs; di/dt=50A/µs

SD 8 0 3 C . . S1 0 C Se r i e s

RRM

1 2 3 4 5 6 7 8

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Ch-technology SD803C..C Series Manual de usuario Pagina 6

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