Ch-technology VS180LM..CS05CB Series Manual de usuario descargar pdf (Pagina 2)

Document Number: 93883 For technical questions, contact: die-wafer@vishay.com

www.vishay.com

Revision: 28-Mar-08 1

Fast Recovery Diodes

VS180LM..CS05CB Series

Vishay High Power Products

FEATURES

• 100 % tested at probe

• Bondable top metal

• Wafer in box, and die in chip carrier

Note

(1)

Nitrogen flow on die edge

ORDERING INFORMATION TABLE

PRODUCT SUMMARY

Junction size Square 180 mils

Wafer size 4"

RRM

class 1000/1200 V

Passivation process Glassivated MOAT

Reference Vishay HPP

packaged part

20ETF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V

= 25 °C, I

= 20 A 1350 mV

Maximum repetitive reverse voltage V

RRM

(1)

= 25 °C, I

RRM

= 100 µA 1000/1200 V

MECHANICAL DATA

Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)

Nominal front metal composition (thickness) 100 % Al (20 µm)

Chip dimensions 180 x 180 mils (4.57 x 4.57) - see dimensions (link at the end of datasheet)

Wafer diameter 100 mm, with standard < 110 > flat

Wafer thickness 260 µm

Maximum width of sawing line 45 µm

Reject ink dot size Ø 0.25 mm minimum

Ink dot location See dimensions (link at the end of datasheet)

Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

Device code

1 - Vishay HPP device

2 - Chip dimension in mils

3 - Type of device: L = Wire bondable fast recovery diode

4 - Passivation process: M = Glassivated MOAT

5 - Voltage code x 100 = V

RRM

- Metallization: C = Aluminum (anode) - silver (cathode)

7 - Fast recovery type: S05 = 500 ns

8 - CB = Probed uncut die (wafer in box)

None = Probed die in chip carrier

Available class

10 = 1000 V

12 = 1200 V

51324678

VS 180 L M 12 C S05 CB

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95153

1 2

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