Ch-technology VS207LM..CS02CB Series Manual de usuario descargar pdf (Pagina 2)

Document Number: 93889 For technical questions, contact: die-wafer@vishay.com

www.vishay.com

Revision: 31-Mar-08 1

Fast Recovery Diodes

VS207LM..CS02CB Series

Vishay High Power Products

FEATURES

• 100 % tested at probe

• Bondable top metal

• Wafer in box, and die in chip carrier

Note

(1)

Nitrogen flow on die edge

PRODUCT SUMMARY

Junction size Rectangular 207 x 157 mils

Wafer size 4"

RRM

class 200 to 600 V

Passivation process Glassivated MOAT

Reference Vishay HPP

packaged part

20ETF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage V

= 25 °C, I

= 20 A 1300 mV

Maximum repetitive reverse voltage V

RRM

(1)

= 25 °C, I

RRM

= 100 µA 200 to 600 V

MECHANICAL DATA

Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)

Nominal front metal composition (thickness) 100 % Al (20 µm)

Chip dimensions 207 x 157 mils (5.26 x 3.99 mm) - see dimensions (link at the end of datasheet)

Wafer diameter 100 mm, with standard < 110 > flat

Wafer thickness 260 µm

Maximum width of sawing line 45 µm

Reject ink dot size Ø 0.25 mm minimum

Ink dot location See dimensions (link at the end of datasheet)

Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination

1 2 3

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