Ch-technology ST333C..L SERIES Manual de usuario descargar pdf (Pagina 4)

ST333C..L Series

3

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Bulletin I25187 rev. B 04/00

V

TM

Max. peak on-state voltage 1.96 I

TM

= 1810A, T

J

= T

J

max, t

p

= 10ms sine wave pulse

V

T(TO)1

Low level value of threshold

voltage

V

T(TO)2

High level value of threshold

voltage

r

t

1

Low level value of forward

slope resistance

r

t2

High level value of forward

slope resistance

I

H

Maximum holding current 600 T

J

= 25°C, I

T

> 30A

I

L

Typical latching current 1000 T

J

= 25°C, V

A

= 12V, Ra = 6Ω, I

G

= 1A

Parameter ST333C..L Units Conditions

On-state Conduction

0.91 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), T

J

= T

J

max.

0.93 (I > π x I

T(AV)

), T

J

= T

J

max.

V

0.58 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), T

J

= T

J

max.

0.58 (I > π x I

T(AV)

), T

J

= T

J

max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= T

J

max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM

,

I

TM

= 50A DC, t

p

= 1µs

Resistive load, Gate pulse: 10V, 5Ω source

T

J

= T

J

max,

I

TM

= 550A, commutating di/dt

= 40A/µs

V

R

= 50V, t

p

= 500µs, dv/dt: see table in device code

Switching

Parameter ST333C..L Units Conditions

1000 A/µs

t

d

Typical delay time 1.1

Min Max

dv/dt Maximum critical rate of rise of T

J

= T

J

max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST333C..L Units Conditions

Blocking

500 V/µs

50 mA T

J

= T

J

max, rated V

DRM

/V

RRM

applied

P

GM

Maximum peak gate power 60

P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A T

J

= T

J

max, t

p

≤ 5ms

+V

GM

Maximum peak positive

gate voltage

-V

GM

Maximum peak negative

gate voltage

I

GT

Max. DC gate current required

to trigger

V

GT

Max. DC gate voltage required

to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST333C..L Units Conditions

WT

J

= T

J

max., f = 50Hz, d% = 50

20

5

VT

J

= T

J

max, t

p

≤ 5ms

200 mA

3V

T

J

= 25°C, V

A

= 12V, Ra = 6Ω

T

J

= T

J

max, rated V

DRM

applied

10 30

µs

t

q

Max. turn-off time

1 2 3 4 5 6 7 8 9 10

ST333C..L SERIES 2
ST333C..L Series 10

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