
ST333C..L Series
7
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Bulletin I25187 rev. B 04/00
Fig. 13 - Frequency Characteristics
Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 12 - Reverse Recovery Current CharacteristicsFig. 11 - Reverse Recovered Charge Characteristics
100
1000
10000
01234567
T = 25° C
J
Instanta neous On-state C urre nt (A)
Instan taneous On-state V oltage (V)
T = 125°C
J
ST333C..L Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Squa re W ave Pulse D uratio n (s)
th J-hs
Transien t Therm al Im peda n ce Z (K/ W)
Ste ad y Sta te Valu e
R = 0.1 1 K/W
(Single Side Cooled)
R = 0.0 5 K/W
(Double Side Cooled)
(D C O pe ration )
thJ-hs
th J-hs
ST333C ..L Serie s
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
200 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Qrr (µC)
ST333C..L Series
T = 125 °C
J
I = 10 00 A
TM
500 A
300 A
100 A
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
M a x im um Reve rse Rec ov ery C urre nt - Irr (A )
Rate Of Fall Of Forw ard Current - di/dt (A/µs)
I = 10 00 A
500 A
200 A
300 A
100 A
ST333C ..L Series
T = 125 ° C
J
TM
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 H z
400
2500
100
Pulse B asew idth (µs)
Peak O n-state Curre nt (A)
1000
1500
3000
200
500
5000
ST3 33C ..L Series
Sinuso ida l p u ls e
T = 40°C
C
Snubber circuit
R = 10 ohm s
C = 0.47 µF
V = 80% V
s
s
D
DRM
tp
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basew idth (µs)
1000
1500
3000
200
500
5000
ST33 3C ..L Se ries
Sin uso i d a l p u ls e
T = 55° C
C
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DR M
tp
1E1
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